BRAND | Ixys Corporation |
Product | IXFN55N50 |
Description | Discrete semiconductor modules |
Internal code | IMP4309833 |
Technical specification | 55 amps 500V 0.08 Rd s RoHS compliant Number of channels: 1 channel Transistor polarity: N-channel waste time: 45 ns Id - drain DC: 55A Pd - power dissipation: 625 W Product type: Discrete Semiconductor Modules Rds On - drain source resistance: 90 mOhms Rise time: 60 ns Factory packaging: 10 Subcategory: Discrete Semiconductor Modules Trade name: HyperFET Control shutdown delay time: 120 ns Typical power-on delay time: 45 ns Vds - drain source breakdown voltage: 500 V |
Discover the superior quality and performance of the Ixys Corporation IXFN55N50 with Impexron GMBH in Ireland . Whether you are looking for reliability or efficiency, this product meets all your industrial needs.
The IXFN55N50 is designed to provide optimal performance and durability in various applications. Known for its high-quality construction and innovative features, it is a preferred choice for professionals.
Key Features of IXFN55N50 :
At Impexron GMBH , we offer the IXFN55N50 at competitive prices and with the fastest delivery times across Ireland . Our expert team is ready to assist you with all your inquiries and provide tailored solutions to meet your specific needs.
Why Choose Impexron GMBH ?
Get Your Quote Today! Ready to enhance your operations with the IXFN55N50 ? Contact us now for a personalized quote. Fill out the form below or send us an email with your inquiry. Let us help you make a cost-effective, quality-driven choice for your business.
Important Notice: While we supply Ixys Corporation products, Impexron GMBH is not an authorized distributor. All rights are reserved by the manufacturers and their official partners.
SCR Module
Control card
Control card
Power board
TRANSISTOR
DSEI2X101-06A
DIODE 2,3A 1800V AVALANCHE
Rectifier Diode
rectifier diode
DIODE
Rectifiers 1200V 11A
DIODE
diode
schottky diode
diode
ID NO 765040 V1...V3 80 A/1200 V
thyristor module
MOQ = 20
Single Breakover Diode
Breakover Diode
MOQ = 20
1090066 IXBOD1-14R BREAKOVER DIODE, 1400V MOQ=20
(MOSFET N-CH 300V 130A SOT-227B IXYS)